target voltage

A pulsed voltage of magnetically insulated diode and pulsed ion beam and temperature evolution of the target including phase transition models have been built by combining Monte Carlo method and thermodynamical method.

结合Monte Carlo方法和热力学方法，建立了脉冲离子束能量模型以及靶材相变温度模型。

Voltage is one of the most important target aims of power quality in power system. Reactive power balance in power system is important condition to ensure the voltage quality.

电压是电力系统电能质量的重要指标之一，而系统的无功平衡是保证电压质最的重要条件。

The target voltage outputs were lower than 1.0 V.The target pulse width outputs ranged from 0.33 ms to 0.45 ms during different follow-up periods.

目标电压输出值在术后不同的随访时期均低于10V。目标脉宽输出在术后1周到6个月在033～045ms之间。

In order to increase neutron output of minitron, it is necessary to use the high-voltage multiplier with high target voltage, strong target current and high-power output.

但为了克服其中子产额低的缺点，需要高靶压、大靶流及输出功率大的高压倍加器。

The Influence of Power Mode on the Target Voltage When Sputtering the ZnO Film by DC Pulse

用中频脉冲电源溅射ZnO薄膜时脉冲参数对溅射电压的影响

On the basis of one-knob linear regression analysis, the unified adjusting of CO_2 welding current target signal and welding voltage target signal has been realized by using hardware circuit, and welding voltage target signal can be fine adjusted.

在一元线性回归分析的基础上，应用硬件电路实现了CO2焊接电流目标信号与焊接电压目标信号的一元化调节，并且具有焊接电压目标信号的微调功能。

The influence of target voltage and deposit rate varying with oxygen flow is discussed. The optimized oxygen flow of deposite oxide film is presented.

讨论了靶电压及沉积速率随氧流量的变化的磁滞回线效应，分析得出了沉积氧化物薄膜的最佳氧流量。

Measurement and analysis have been made on the target voltage induced by the effect of spatial charge seperation at various power densities.

观测并分析了不同功率密度下，由于激光等离子体的空间电荷分离效应而产生的靶电压。

Influence of various factors, including microwave power, target voltage and gas pressure, on the plasma properties in diamond-like carbon ( DLC) film growth was also discussed.

研究结果表明，微波功率、靶电压和真空度等参数对等离子体特性具有重要的影响。

Pure Cr coatings were deposited under different target voltage and bias voltage& duty cycle by closed-field unbalanced magnetron sputtering.

本文采用闭合场非平衡磁控溅射离子镀技术在不同的靶电压、偏压、占空比下制备了纯Cr镀层。

By using C8051F040 SCM to control the neutron tube ′ s filament voltage, the target voltage and the pulse of the anode, the downhole tool can work at an ideal state.

通过C8051F040单片机对中子管的灯丝电压、靶压以及阳极脉冲进行控制，使其工作在一个理想状态，是提高仪器测井效率、延长中子管使用寿命的重要手段。

Measurement of target voltage in laser plasmas

激光等离子体中的靶电压测量

Our results reveal that high pyroelectric property of BST thin film could be achievable using inverted cylindrical RF sputtering with high target self-bias voltage.

研究结果表明，利用倒筒式射频溅射方法，适当提高自偏压，可以制备出热释电性能优良的BST薄膜。

The influence of target self-bias voltage on the microstructure and electrical properties of sputtered BST films was investigated.

研究了自偏压对BST薄膜结构及电学性能的影响。

The thickness of Al films was correlated with bias voltage, deposition time, Al target current, and the substrates' conductivity.

铝膜厚度与偏转电压、沉积时间、Al靶电流以及基底材料的导电性能等PVD处理参数相关；

The results indicate that the collected current density is increasing with the magnetic field current. It is reach to 5.77 mA/ cm 2 at bias voltage being 150 V, the discharge gas being Ar, pressure being 0.2 Pa and target current being 3 A.

结果表明，探针的收集电流密度随磁镜场的激励电流增加显著增大，在偏压150V、工作气体Ar、压力0.2Pa和磁控溅射靶工作电流3A时，收集的电流密度可以达到5.77mA/cm2。

Regression equation shows that one-knob linear regression coefficient for welding current target signal and welding voltage target signal in CO_2 welding process will increase with an increase in ( welding) wire diameter, but constants of regression equation will decrease.

回归方程表明，CO2焊接随焊丝直径增加，其焊接电流目标信号与焊接电压目标信号的一元线性回归系数增加，回归方程的常数项减小。

Battery voltage sense input above target charging voltage during engine operation.

在引擎运转时，电池电压感应输入高于标准充电电压。

Deposited at high target self-bias voltage, the BST thin films are highly ( 100)-orientation, and have smooth surface, excellent crystallinity and good withstand voltage properties.

在较高自偏压下制备的BST薄膜具有高度的（100）择优取向，且结晶性好，表面平整，耐压能力强。

The signal current increases linearly with light intensity, r is about 0.95. The dark current is about 1-3 nA at operating target voltage.

信号电流随照度线性增加，γ值约为0.95。在工作电压下暗电流约为1&3nA。